On the importance of electron–electron scattering for hot-carrier degradation
نویسندگان
چکیده
Using our physics based model for hot-carrier degradation (HCD) we analyze the effect of electron-electron scattering (EES) on HCD in devices with different channel lengths. We show that – in contrast to recent suggestions – EES does play a crucial role in ultra-scaled MOSFETs and can be important also in long transistors with the lengths as long as 300nm.
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